Technology for Forming Contacts from Refractory Metals to Doped Semiconductor Layers
Dagestan State University of National Economy, Makhachkala, 367008, Russian Federation; N.V. Cherkesova; G.A Mustafaev; Dagestan State University of National Economy, Makhachkala, 367008, Russian Federation; A.G. Mustafaev; Kabardino-Balkarian State University, Nalchik, 360004, Russian Federation
- Published
- Publisher
- New Technologies Publishing House
- Journal / collection
- Nano- i Mikrosistemnaya Tehnika
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.17587/nmst.26.184-187
The original publisher provides the full text and its access options.
Cite this source
Dagestan State University of National Economy, Makhachkala, 367008, Russian Federation; N.V. Cherkesova; G.A Mustafaev; Dagestan State University of National Economy, Makhachkala, 367008, Russian Federation; A.G. Mustafaev; Kabardino-Balkarian State University, Nalchik, 360004, Russian Federation. Technology for Forming Contacts from Refractory Metals to Doped Semiconductor Layers. Nano- i Mikrosistemnaya Tehnika. 2024-08-22. https://doi.org/10.17587/nmst.26.184-187