Recombination Effects on Base Transit Time in Exponentially-Doped SiGe Heterojunction Bipolar Transistor (HBT): An Analytical Approach
Muhammad Johirul Islam; Md.Iqbal Bahar Chowdhury
- Published
- Publisher
- Universidade Federal de Vicosa
- Journal / collection
- The Journal of Engineering and Exact Sciences
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.18540/jcecvl11iss1pp21464
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Cite this source
Muhammad Johirul Islam; Md.Iqbal Bahar Chowdhury. Recombination Effects on Base Transit Time in Exponentially-Doped SiGe Heterojunction Bipolar Transistor (HBT): An Analytical Approach. The Journal of Engineering and Exact Sciences. 2025-03-06. https://doi.org/10.18540/jcecvl11iss1pp21464