Ultra Low Power and High Speed Electronic Circuits Using Double Gate Tunnel Field Effect Transistor
Ch. Pavan Kumar; K. Sivani
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of The Institution of Engineers (India): Series B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s40031-024-01122-y
The original publisher provides the full text and its access options.
Cite this source
Ch. Pavan Kumar; K. Sivani. Ultra Low Power and High Speed Electronic Circuits Using Double Gate Tunnel Field Effect Transistor. Journal of The Institution of Engineers (India): Series B. 2024-08-01. https://doi.org/10.1007/s40031-024-01122-y