Transistor Structure with a Two-Dimensional Channel Electrophysical Parameters Interrelation Under Conditions of Instability
U. A. Zaitsau; D. A. Podryabinkin; V. V. Melnikova; A. L. Danilyuk
- Published
- Publisher
- Belarusian State University of Informatics and Radioelectronics
- Journal / collection
- Doklady BGUIR
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35596/1729-7648-2024-22-4-22-29
The original publisher provides the full text and its access options.
Cite this source
U. A. Zaitsau; D. A. Podryabinkin; V. V. Melnikova; A. L. Danilyuk. Transistor Structure with a Two-Dimensional Channel Electrophysical Parameters Interrelation Under Conditions of Instability. Doklady BGUIR. 2024-09-01. https://doi.org/10.35596/1729-7648-2024-22-4-22-29