SiC-based high electron mobility transistor
Hiroyuki Sazawa; Akira Nakajima; Shigeyuki Kuboya; Hitoshi Umezawa; Tomohisa Kato; Yasunori Tanaka
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0202925
The original publisher provides the full text and its access options.
Cite this source
Hiroyuki Sazawa; Akira Nakajima; Shigeyuki Kuboya; Hitoshi Umezawa; Tomohisa Kato; Yasunori Tanaka. SiC-based high electron mobility transistor. Applied Physics Letters. 2024-03-18. https://doi.org/10.1063/5.0202925