A Novel AlGaN/GaN Lateral Bipolar Junction Transistor Exploiting Polarization Effects
Kailin Ren; Yang Shi; Xiazhi Zou; Luqiao Yin; Jianhua Zhang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2023.3340141
The original publisher provides the full text and its access options.
Cite this source
Kailin Ren; Yang Shi; Xiazhi Zou; Luqiao Yin; Jianhua Zhang. A Novel AlGaN/GaN Lateral Bipolar Junction Transistor Exploiting Polarization Effects. IEEE Transactions on Electron Devices. 2024-03. https://doi.org/10.1109/ted.2023.3340141