Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures
Jan Tröger; Reinhard Kersting; Birgit Hagenhoff; Dominique Bougeard; Nikolay V. Abrosimov; Jan Klos; Lars R. Schreiber; Hartmut Bracht
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0232252
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Cite this source
Jan Tröger; Reinhard Kersting; Birgit Hagenhoff; Dominique Bougeard; Nikolay V. Abrosimov; Jan Klos; Lars R. Schreiber; Hartmut Bracht. Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures. Journal of Applied Physics. 2025-01-08. https://doi.org/10.1063/5.0232252