A new stacked gate oxide L-shaped tunnel field effect transistor
Kaveh Eyvazi; Hamid Reza Yaghoubi; Mohammad Azim Karami
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Computational Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s10825-024-02183-4
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Cite this source
Kaveh Eyvazi; Hamid Reza Yaghoubi; Mohammad Azim Karami. A new stacked gate oxide L-shaped tunnel field effect transistor. Journal of Computational Electronics. 2024-06-03. https://doi.org/10.1007/s10825-024-02183-4