Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor
Anirudh Venugopalarao; Shantveer Kanta; Hareesh Chandrasekar; Aniruddhan Gowrisankar; Muralidharan R. Rengarajan; Digbijoy N. Nath; Srinivasan Raghavan
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400050
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Cite this source
Anirudh Venugopalarao; Shantveer Kanta; Hareesh Chandrasekar; Aniruddhan Gowrisankar; Muralidharan R. Rengarajan; Digbijoy N. Nath; Srinivasan Raghavan. Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor. physica status solidi (a). 2024-07-21. https://doi.org/10.1002/pssa.202400050