Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory
Pragya R. Shrestha; Alexander Zaslavsky; Valery Ortiz Jimenez; Jason P. Campbell; Curt A. Richter
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Journal of the Electron Devices Society
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/jeds.2025.3552036
The original publisher provides the full text and its access options.
Cite this source
Pragya R. Shrestha; Alexander Zaslavsky; Valery Ortiz Jimenez; Jason P. Campbell; Curt A. Richter. Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory. IEEE Journal of the Electron Devices Society. 2025. https://doi.org/10.1109/jeds.2025.3552036