A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-Gate Metal-Oxide-Semiconductor Field-Effect-Transistors
Te-Kuang Chiang
- Published
- Publisher
- MDPI AG
- Journal / collection
- Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/electronicmat5040020
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Cite this source
Te-Kuang Chiang. A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-Gate Metal-Oxide-Semiconductor Field-Effect-Transistors. Electronic Materials. 2024-12-13. https://doi.org/10.3390/electronicmat5040020