Visible-Light-Stimulated Optoelectronic Neuromorphic Transistor Based on Indium–Gallium–Zinc Oxide via Bi 2 Te 3 Light Absorption Layer
Hyung Tae Kim; Dong Hyun Choi; Min Seong Kim; Sujin Lee; Byung Ha Kang; Hyun Jae Kim
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.4c14088
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Cite this source
Hyung Tae Kim; Dong Hyun Choi; Min Seong Kim; Sujin Lee; Byung Ha Kang; Hyun Jae Kim. Visible-Light-Stimulated Optoelectronic Neuromorphic Transistor Based on Indium–Gallium–Zinc Oxide via Bi 2 Te 3 Light Absorption Layer. ACS Applied Materials & Interfaces. 2024-12-02. https://doi.org/10.1021/acsami.4c14088