Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor
A. S. Jaroshevich; V. A. Tkachenko; Z. D. Kvon; N. S. Kuzmin; O. A. Tkachenko; D. G. Baksheev; I. V. Marchishin; A. K. Bakarov; E. E. Rodyakina; V. A. Antonov; V. P. Popov; A. V. Latyshev
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Bulletin of the Russian Academy of Sciences: Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1062873824707773
The original publisher provides the full text and its access options.
Cite this source
A. S. Jaroshevich; V. A. Tkachenko; Z. D. Kvon; N. S. Kuzmin; O. A. Tkachenko; D. G. Baksheev; I. V. Marchishin; A. K. Bakarov; E. E. Rodyakina; V. A. Antonov; V. P. Popov; A. V. Latyshev. Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor. Bulletin of the Russian Academy of Sciences: Physics. 2024-09. https://doi.org/10.1134/s1062873824707773