Design and Performance Analysis of Normally -Off Extended Gate (AlGa)2O3/Ga2O3 High Electron Mobility Transistor
Ashish Raman; Suryansh Raheja; Ravi Ranjan
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Transactions on Electrical and Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s42341-024-00537-0
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Cite this source
Ashish Raman; Suryansh Raheja; Ravi Ranjan. Design and Performance Analysis of Normally -Off Extended Gate (AlGa)2O3/Ga2O3 High Electron Mobility Transistor. Transactions on Electrical and Electronic Materials. 2024-04-16. https://doi.org/10.1007/s42341-024-00537-0