Ambipolarity suppression in electrically doped tunnel field effect transistor using asymmetric bias in polarity gates
Akshatha Bhat; Bhaskar Awadhiya; Sameer Yadav; Yashwanth Nanjappa; Abhishek Pahuja; Sachin Agrawal
- Published
- Publisher
- Elsevier BV
- Journal / collection
- e-Prime - Advances in Electrical Engineering, Electronics and Energy
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.prime.2025.100928
The original publisher provides the full text and its access options.
Cite this source
Akshatha Bhat; Bhaskar Awadhiya; Sameer Yadav; Yashwanth Nanjappa; Abhishek Pahuja; Sachin Agrawal. Ambipolarity suppression in electrically doped tunnel field effect transistor using asymmetric bias in polarity gates. e-Prime - Advances in Electrical Engineering, Electronics and Energy. 2025-03. https://doi.org/10.1016/j.prime.2025.100928