The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor
Zhihua Dong; Leifeng Jiang; Manqi Su; Chunhong Zeng; Hui Liu; Botong Li; Yuhua Sun; Qi Cui; Zhongming Zeng; Baoshun Zhang
- Published
- Publisher
- MDPI AG
- Journal / collection
- Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/electronics13030596
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Cite this source
Zhihua Dong; Leifeng Jiang; Manqi Su; Chunhong Zeng; Hui Liu; Botong Li; Yuhua Sun; Qi Cui; Zhongming Zeng; Baoshun Zhang. The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor. Electronics. 2024-01-31. https://doi.org/10.3390/electronics13030596