Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy
Felix V.E. Hensling; Patrick Vogt; Jisung Park; Shun‐Li Shang; Huacheng Ye; Yu‐Mi Wu; Kathleen Smith; Veronica Show; Kathy Azizie; Hanjong Paik; Debdeep Jena; Huili G. Xing; Y. Eren Suyolcu; Peter A. van Aken; Suman Datta; Zi‐Kui Liu; Darrell G. Schlom
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aelm.202400499
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Felix V.E. Hensling; Patrick Vogt; Jisung Park; Shun‐Li Shang; Huacheng Ye; Yu‐Mi Wu; Kathleen Smith; Veronica Show; Kathy Azizie; Hanjong Paik; Debdeep Jena; Huili G. Xing; Y. Eren Suyolcu; Peter A. van Aken; Suman Datta; Zi‐Kui Liu; Darrell G. Schlom. Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy. Advanced Electronic Materials. 2024-09-11. https://doi.org/10.1002/aelm.202400499