Design and Analysis of Dielectric Spacer Dual Oxide Gate L Shaped Tunnel Field Effect Transistor with Extended Source and Drain
D. Venkatarami Reddy; R. Erigela; G. Sirisha; G. Chenna Kesava Reddy; B. Nageshwar Rao; L. Singh; B. Balaji; S. V. Cheerla; V. Agarwal
- Published
- Publisher
- International Digital Organization for Scientific Information (IDOSI)
- Journal / collection
- International Journal of Engineering
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.5829/ije.2025.38.12c.08
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Cite this source
D. Venkatarami Reddy; R. Erigela; G. Sirisha; G. Chenna Kesava Reddy; B. Nageshwar Rao; L. Singh; B. Balaji; S. V. Cheerla; V. Agarwal. Design and Analysis of Dielectric Spacer Dual Oxide Gate L Shaped Tunnel Field Effect Transistor with Extended Source and Drain. International Journal of Engineering. 2025. https://doi.org/10.5829/ije.2025.38.12c.08