In-Depth Analysis of Transistor Influence on OxRAM Performance in Memory Bitcell, With Technology Scaling Perspectives
F. Berthaud; S. Martin; J. Rottner; V. Meli; J.-F. Nodin; L. Grenouillet; S. Ricavy; M. Cassé; N. Castellani
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3364114
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Cite this source
F. Berthaud; S. Martin; J. Rottner; V. Meli; J.-F. Nodin; L. Grenouillet; S. Ricavy; M. Cassé; N. Castellani. In-Depth Analysis of Transistor Influence on OxRAM Performance in Memory Bitcell, With Technology Scaling Perspectives. IEEE Transactions on Electron Devices. 2024-04. https://doi.org/10.1109/ted.2024.3364114