Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate
Tomoharu Sugino; Kenji Osaki; Kentaro Nonaka; Tomohiko Sugiyama; Yoshitaka Kuraoka; Akio Wakejima
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400057
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Cite this source
Tomoharu Sugino; Kenji Osaki; Kentaro Nonaka; Tomohiko Sugiyama; Yoshitaka Kuraoka; Akio Wakejima. Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate. physica status solidi (a). 2024-08-12. https://doi.org/10.1002/pssa.202400057