Gate‐Tunable Circular Photogalvanic Effects in Two‐dimensional Perovskite Ferroelectric‐based Transistor toward Multi‐state Memory
Wuqian Guo; Haojie Xu; Fapeng Sun; Yi Liu; Yu Ma; Wei Liu; Yue Zhao; Zhihua Sun; Junhua Luo
- Published
- Publisher
- Wiley
- Journal / collection
- Angewandte Chemie International Edition
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/anie.202421463
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Cite this source
Wuqian Guo; Haojie Xu; Fapeng Sun; Yi Liu; Yu Ma; Wei Liu; Yue Zhao; Zhihua Sun; Junhua Luo. Gate‐Tunable Circular Photogalvanic Effects in Two‐dimensional Perovskite Ferroelectric‐based Transistor toward Multi‐state Memory. Angewandte Chemie International Edition. 2025-02-28. https://doi.org/10.1002/anie.202421463