Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations
Min Seok Kim; Sang Ho Lee; Jin Park; Ga Eon Kang; Jun Hyeok Heo; So Ra Jeon; Seung Ji Bae; Jeong Woo Hong; Jaewon Jang; Jin-Hyuk Bae; Sin-Hyung Lee; In Man Kang
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ad24a2
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Min Seok Kim; Sang Ho Lee; Jin Park; Ga Eon Kang; Jun Hyeok Heo; So Ra Jeon; Seung Ji Bae; Jeong Woo Hong; Jaewon Jang; Jin-Hyuk Bae; Sin-Hyung Lee; In Man Kang. Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations. Japanese Journal of Applied Physics. 2024-02-21. https://doi.org/10.35848/1347-4065/ad24a2