Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)
Jingyu Park; Seungwon Go; Woojun Chae; Chang Il Ryoo; Changwook Kim; Hyungju Noh; Seonggeun Kim; Byung Du Ahn; In-Tak Cho; Pil Sang Yun; Jong Uk Bae; Yoo Seok Park; Sangwan Kim; Dae Hwan Kim
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Scientific Reports
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41598-024-60288-z
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Cite this source
Jingyu Park; Seungwon Go; Woojun Chae; Chang Il Ryoo; Changwook Kim; Hyungju Noh; Seonggeun Kim; Byung Du Ahn; In-Tak Cho; Pil Sang Yun; Jong Uk Bae; Yoo Seok Park; Sangwan Kim; Dae Hwan Kim. Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT). Scientific Reports. 2024-05-02. https://doi.org/10.1038/s41598-024-60288-z