Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors
Kuan-Chu Chen; Clement Godfrin; George Simion; Imri Fattal; Julien Jussot; Stefan Kubicek; Sofie Beyne; Bart Raes; Arne Loenders; Kuo-Hsing Kao; Danny Wan; Kristiaan De Greve
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/physrevb.111.125301
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Cite this source
Kuan-Chu Chen; Clement Godfrin; George Simion; Imri Fattal; Julien Jussot; Stefan Kubicek; Sofie Beyne; Bart Raes; Arne Loenders; Kuo-Hsing Kao; Danny Wan; Kristiaan De Greve. Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors. Physical Review B. 2025-03-05. https://doi.org/10.1103/physrevb.111.125301