ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate
Caroline Elias; Sébastien Chenot; Florian Bartoli; Maxime Hugues; Yvon Cordier
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400963
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Cite this source
Caroline Elias; Sébastien Chenot; Florian Bartoli; Maxime Hugues; Yvon Cordier. ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate. physica status solidi (a). 2025-01-26. https://doi.org/10.1002/pssa.202400963