Noval carrier accumulation reverse-conducting lateral insulated gate bipolar transistor
Bao-Xing Duan; Jia-Sen Wang; Chun-Ping Tang; Yin-Tang Yang; Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.73.20240572
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Cite this source
Bao-Xing Duan; Jia-Sen Wang; Chun-Ping Tang; Yin-Tang Yang; Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China. Noval carrier accumulation reverse-conducting lateral insulated gate bipolar transistor. Acta Physica Sinica. 2024. https://doi.org/10.7498/aps.73.20240572