Precession-Assisted 4D-STEM Strain Characterization of Semiconductor Devices
Eduardo Serralta; Tomáš Moravek; Rob Hooley; Narendraraj Chandran
- Published
- Publisher
- Oxford University Press (OUP)
- Journal / collection
- Microscopy and Microanalysis
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1093/mam/ozae044.080
The original publisher provides the full text and its access options.
Cite this source
Eduardo Serralta; Tomáš Moravek; Rob Hooley; Narendraraj Chandran. Precession-Assisted 4D-STEM Strain Characterization of Semiconductor Devices. Microscopy and Microanalysis. 2024-07. https://doi.org/10.1093/mam/ozae044.080