Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfN x interfacial layer
Hyun Woo Nam; Jae Hoon Lee; Seung Kyu Ryoo; Seong Jae Shin; Kun Hee Ye; Kyung Do Kim; Seung yong Byun; In Soo Lee; Suk Hyun Lee; Jae Hee Song; Jung hae Choi; Cheol Seong Hwang
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- Journal of Materials Chemistry C
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d5tc00453e
The original publisher provides the full text and its access options.
Cite this source
Hyun Woo Nam; Jae Hoon Lee; Seung Kyu Ryoo; Seong Jae Shin; Kun Hee Ye; Kyung Do Kim; Seung yong Byun; In Soo Lee; Suk Hyun Lee; Jae Hee Song; Jung hae Choi; Cheol Seong Hwang. Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfN x interfacial layer. Journal of Materials Chemistry C. 2025. https://doi.org/10.1039/d5tc00453e