Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor
Dong-Hee Lee; Young-Ha Kwon; Nak-Jin Seong; Kyu-Jeong Choi; Jong-Heon Yang; Chi-Sun Hwang; Sung-Min Yoon
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Electronic Materials Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s13391-024-00513-z
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Cite this source
Dong-Hee Lee; Young-Ha Kwon; Nak-Jin Seong; Kyu-Jeong Choi; Jong-Heon Yang; Chi-Sun Hwang; Sung-Min Yoon. Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor. Electronic Materials Letters. 2024-07-30. https://doi.org/10.1007/s13391-024-00513-z