Ionizing Radiation Detection Using the Field Effect Transistor Based on Reduced Graphene Oxide
Electronics and Computer Technologies Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine; I. B. Olenych; Yu. Yu. Horbenko; Chemistry Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine; L. S. Monastyrskii; Electronics and Computer Technologies Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine; O. I. Aksimentyeva; Chemistry Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine; O. S. Dzendzelyuk; Electronics and Computer Technologies Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine
- Published
- Publisher
- Sumy State University
- Journal / collection
- Journal of Nano- and Electronic Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.21272/jnep.16(2).02019
The original publisher provides the full text and its access options.
Cite this source
Electronics and Computer Technologies Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine; I. B. Olenych; Yu. Yu. Horbenko; Chemistry Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine; L. S. Monastyrskii; Electronics and Computer Technologies Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine; O. I. Aksimentyeva; Chemistry Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine; O. S. Dzendzelyuk; Electronics and Computer Technologies Department, Ivan Franko National University of Lviv, 79005 Lviv, Ukraine. Ionizing Radiation Detection Using the Field Effect Transistor Based on Reduced Graphene Oxide. Journal of Nano- and Electronic Physics. 2024. https://doi.org/10.21272/jnep.16(2).02019