Gas Sensing Properties of Indium–Oxide–Based Field–Effect Transistor: A Review
Chengyao Liang; Zhongyu Cao; Jiongyue Hao; Shili Zhao; Yuanting Yu; Yingchun Dong; Hangyu Liu; Chun Huang; Chao Gao; Yong Zhou; Yong He
- Published
- Publisher
- MDPI AG
- Journal / collection
- Sensors
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/s24186150
The original publisher provides the full text and its access options.
Cite this source
Chengyao Liang; Zhongyu Cao; Jiongyue Hao; Shili Zhao; Yuanting Yu; Yingchun Dong; Hangyu Liu; Chun Huang; Chao Gao; Yong Zhou; Yong He. Gas Sensing Properties of Indium–Oxide–Based Field–Effect Transistor: A Review. Sensors. 2024-09-23. https://doi.org/10.3390/s24186150