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Research literature / Conference paper

28 nm MOS Transistor SPICE BSIM Model based on Equivalent Gate Oxide Capacitance supporting Electrical Effects of 1-Grad Total Ionizing Dose

L. Gelmi; A. Baschirotto; E. A. Vallicelli; M. Barbaro; M. De Matteis

Published
Publisher
IEEE
Journal / collection
2024 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/nss/mic/rtsd57108.2024.10656622

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L. Gelmi; A. Baschirotto; E. A. Vallicelli; M. Barbaro; M. De Matteis. 28 nm MOS Transistor SPICE BSIM Model based on Equivalent Gate Oxide Capacitance supporting Electrical Effects of 1-Grad Total Ionizing Dose. 2024 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD). 2024-10-26. https://doi.org/10.1109/nss/mic/rtsd57108.2024.10656622

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