Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors
Yang-Fan Li; Hong-Xia Guo; Hong Zhang; Ru-Xue Bai; Feng-Qi Zhang; Wu-Ying Ma; Xiang-Li Zhong; Ji-Fang Li; Xiao-Jie Lu; School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China; Northwest Institute of Nuclear Technology, Xi’an 710024, China; State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, China Electronic Product Reliability and Environmental Research Institute, Guangzhou 510610, China
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.73.20231440
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Cite this source
Yang-Fan Li; Hong-Xia Guo; Hong Zhang; Ru-Xue Bai; Feng-Qi Zhang; Wu-Ying Ma; Xiang-Li Zhong; Ji-Fang Li; Xiao-Jie Lu; School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China; Northwest Institute of Nuclear Technology, Xi’an 710024, China; State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, China Electronic Product Reliability and Environmental Research Institute, Guangzhou 510610, China. Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica. 2024. https://doi.org/10.7498/aps.73.20231440