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Research literature / Conference paper

Advanced potentiometric water-gated configuration using AlGaN/GaN high electron mobility transistor (WGHEMT)

Amirul Firdaus; Najihah Fauzi; Sabah M. Mohammad; Hiroshi Kawarada; Shaili Falina; Mohd Syamsul

Published
Publisher
AIP Publishing
Journal / collection
AIP Conference Proceedings
Research area
Semiconductors
Source type
Conference paper
DOI
10.1063/5.0278041

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Amirul Firdaus; Najihah Fauzi; Sabah M. Mohammad; Hiroshi Kawarada; Shaili Falina; Mohd Syamsul. Advanced potentiometric water-gated configuration using AlGaN/GaN high electron mobility transistor (WGHEMT). AIP Conference Proceedings. 2025. https://doi.org/10.1063/5.0278041

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