Passing Word Line-Induced Subthreshold Leakage Reduction Using a Partial Insulator in a Buried Channel Array Transistor
Suyeon Kim; Dong Young Kim; Je Won Park; Shinwook Kim; Seungchan Lee; Han Seung Jang; Jinseok Park; Sunyong Yoo; Myoung Jin Lee
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3379963
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Cite this source
Suyeon Kim; Dong Young Kim; Je Won Park; Shinwook Kim; Seungchan Lee; Han Seung Jang; Jinseok Park; Sunyong Yoo; Myoung Jin Lee. Passing Word Line-Induced Subthreshold Leakage Reduction Using a Partial Insulator in a Buried Channel Array Transistor. IEEE Transactions on Electron Devices. 2024-05. https://doi.org/10.1109/ted.2024.3379963