Influence of High-κ Dielectrics Integration on ALD-Based MoS 2 Field-Effect Transistor Performance
Reyhaneh Mahlouji; Yue Zhang; Marcel A. Verheijen; Saurabh Karwal; Jan P. Hofmann; Wilhelmus M. M. Kessels; Ageeth A. Bol
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Nano Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsanm.4c02214
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Cite this source
Reyhaneh Mahlouji; Yue Zhang; Marcel A. Verheijen; Saurabh Karwal; Jan P. Hofmann; Wilhelmus M. M. Kessels; Ageeth A. Bol. Influence of High-κ Dielectrics Integration on ALD-Based MoS 2 Field-Effect Transistor Performance. ACS Applied Nano Materials. 2024-08-12. https://doi.org/10.1021/acsanm.4c02214