Review of: "The formation of Schottky barriers in the source and drain of a transistor causes a significant decrease in the drain current of FinFET nanotransistors"
Patrick Berger
- Published
- Publisher
- Qeios Ltd
- Journal / collection
- Qeios
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.32388/r7kf49
The original publisher provides the full text and its access options.
Cite this source
Patrick Berger. Review of: "The formation of Schottky barriers in the source and drain of a transistor causes a significant decrease in the drain current of FinFET nanotransistors". Qeios. 2024-01-16. https://doi.org/10.32388/r7kf49