Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope
Lingyu Zhu; Jielian Zhang; Xinhao Chen; Nabuqi Bu; Tao Zheng; Wei Gao; Fei Li; Yiming Zhao; Yiming Sun; Shasha Li; Nengjie Huo; Jingbo Li
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Functional Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adfm.202316488
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Cite this source
Lingyu Zhu; Jielian Zhang; Xinhao Chen; Nabuqi Bu; Tao Zheng; Wei Gao; Fei Li; Yiming Zhao; Yiming Sun; Shasha Li; Nengjie Huo; Jingbo Li. Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope. Advanced Functional Materials. 2024-04-22. https://doi.org/10.1002/adfm.202316488