Gate-All-Around Vertical Channel Transistor Based on Self-Aligned in 2 Pitch Process for Future DRAM
Seunguk Han
- Published
- Publisher
- The Japan Society of Applied Physics
- Journal / collection
- Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.7567/ssdm.2024.a-4-06
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Cite this source
Seunguk Han. Gate-All-Around Vertical Channel Transistor Based on Self-Aligned in 2 Pitch Process for Future DRAM. Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials. 2024-09-03. https://doi.org/10.7567/ssdm.2024.a-4-06