Resistance switching of graphene by gate-controlled polarization reorientation of polyvinylidene fluoride in a field effect transistor
Jinhee Lee; Nodo Lee; Yves Lansac; Yun Hee Jang
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- Physical Chemistry Chemical Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d4cp03086a
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Cite this source
Jinhee Lee; Nodo Lee; Yves Lansac; Yun Hee Jang. Resistance switching of graphene by gate-controlled polarization reorientation of polyvinylidene fluoride in a field effect transistor. Physical Chemistry Chemical Physics. 2024. https://doi.org/10.1039/d4cp03086a