Third-Quadrant Conduction Induced Dynamic R on Effect in GaN Gate-Injection-Transistor
Shaoyu Sun; Xu Du; Ling Xia; Qi Qin; Wengang Wu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3471748
The original publisher provides the full text and its access options.
Cite this source
Shaoyu Sun; Xu Du; Ling Xia; Qi Qin; Wengang Wu. Third-Quadrant Conduction Induced Dynamic R on Effect in GaN Gate-Injection-Transistor. IEEE Transactions on Electron Devices. 2024-12. https://doi.org/10.1109/ted.2024.3471748