Comparative studies of metamorphic and strained InGaAs p-type semiconductor - intrinsic absorption layer - n-type semiconductor photodetector for low-temperature CH4 detection
Xueting Du; Kai Niu; Wei Mi; Di Wang; Yan Zhu; Lin’an He; Liwei Zhou; Juan Wang; Xingcheng Zhang; Jinshi Zhao
- Published
- Publisher
- American Vacuum Society
- Journal / collection
- Journal of Vacuum Science & Technology B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1116/6.0004069
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Cite this source
Xueting Du; Kai Niu; Wei Mi; Di Wang; Yan Zhu; Lin’an He; Liwei Zhou; Juan Wang; Xingcheng Zhang; Jinshi Zhao. Comparative studies of metamorphic and strained InGaAs p-type semiconductor - intrinsic absorption layer - n-type semiconductor photodetector for low-temperature CH4 detection. Journal of Vacuum Science & Technology B. 2024-11-18. https://doi.org/10.1116/6.0004069