Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization
Linyu Huang; Kenta Moto; Kota Igura; Takamitsu Ishiyama; Kaoru Toko; Dong Wang; Keisuke Yamamoto
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ad13a1
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Cite this source
Linyu Huang; Kenta Moto; Kota Igura; Takamitsu Ishiyama; Kaoru Toko; Dong Wang; Keisuke Yamamoto. Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization. Japanese Journal of Applied Physics. 2024-01-05. https://doi.org/10.35848/1347-4065/ad13a1