Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN
Li Ye; Yongchao Liang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Today Communications
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mtcomm.2024.109586
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Cite this source
Li Ye; Yongchao Liang. Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN. Materials Today Communications. 2024-08. https://doi.org/10.1016/j.mtcomm.2024.109586