Reduced temperature in lateral (Al x Ga1− x )2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
Hannah N. Masten; James Spencer Lundh; Tatyana I. Feygelson; Kohei Sasaki; Zhe Cheng; Joseph A. Spencer; Pai-Ying Liao; Jennifer K. Hite; Daniel J. Pennachio; Alan G. Jacobs; Michael A. Mastro; Boris N. Feigelson; Akito Kuramata; Peide Ye; Samuel Graham; Bradford B. Pate; Karl D. Hobart; Travis J. Anderson; Marko J. Tadjer
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0191771
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Cite this source
Hannah N. Masten; James Spencer Lundh; Tatyana I. Feygelson; Kohei Sasaki; Zhe Cheng; Joseph A. Spencer; Pai-Ying Liao; Jennifer K. Hite; Daniel J. Pennachio; Alan G. Jacobs; Michael A. Mastro; Boris N. Feigelson; Akito Kuramata; Peide Ye; Samuel Graham; Bradford B. Pate; Karl D. Hobart; Travis J. Anderson; Marko J. Tadjer. Reduced temperature in lateral (Al x Ga1− x )2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond. Applied Physics Letters. 2024-04-08. https://doi.org/10.1063/5.0191771