Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors
Roshni Oommen; Adikiran S B; Akash R.; Gautham G; Aswathi R Nair
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Nanotechnology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tnano.2025.3602073
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Cite this source
Roshni Oommen; Adikiran S B; Akash R.; Gautham G; Aswathi R Nair. Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors. IEEE Transactions on Nanotechnology. 2025. https://doi.org/10.1109/tnano.2025.3602073