Epitaxial growth of a high-quality GaN/AlN heterostructure for the development of an AlN-back barrier high-electron-mobility-transistor
Sitong Chen; Qiushuang Chen; Fang Ye; Ge Gao; Li Chen; Jie Lin; Meng Cao; Jichun Ye; Wei Guo
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- CrystEngComm
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d5ce00205b
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Cite this source
Sitong Chen; Qiushuang Chen; Fang Ye; Ge Gao; Li Chen; Jie Lin; Meng Cao; Jichun Ye; Wei Guo. Epitaxial growth of a high-quality GaN/AlN heterostructure for the development of an AlN-back barrier high-electron-mobility-transistor. CrystEngComm. 2025. https://doi.org/10.1039/d5ce00205b