Advanced 2T0C DRAM Technologies for Processing-in-Memory—Part I: Vertical Transistor on Gate (VTG) DRAM Cell Structure
Seong Hwan Kong; Wonbo Shim
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3447612
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Cite this source
Seong Hwan Kong; Wonbo Shim. Advanced 2T0C DRAM Technologies for Processing-in-Memory—Part I: Vertical Transistor on Gate (VTG) DRAM Cell Structure. IEEE Transactions on Electron Devices. 2024-11. https://doi.org/10.1109/ted.2024.3447612