Ferroelectric Polarization Coupling Effect in BiFeO 3 /α‐In 2 Se 3 Ferroelectric Field Effect Transistor for Stable Non‐volatile Memory
Yanrong Wang; Yuchen Cai; Shuhui Li; Xueying Zhan; Ruiqing Cheng; Zhenxing Wang; Jun He; Feng Wang
- Published
- Publisher
- Wiley
- Journal / collection
- Small
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/smll.202409922
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Cite this source
Yanrong Wang; Yuchen Cai; Shuhui Li; Xueying Zhan; Ruiqing Cheng; Zhenxing Wang; Jun He; Feng Wang. Ferroelectric Polarization Coupling Effect in BiFeO 3 /α‐In 2 Se 3 Ferroelectric Field Effect Transistor for Stable Non‐volatile Memory. Small. 2024-12-24. https://doi.org/10.1002/smll.202409922