A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V F · C res figure of merit
Wei Wei; Xiaoli Tian; Xinyu Liu; Xinhua Wang; Yun Bai; Yidan Tang; Wenjing Jiang; Chengyue Yang; Jilong Hao; Xuan Li
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ad1d19
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Cite this source
Wei Wei; Xiaoli Tian; Xinyu Liu; Xinhua Wang; Yun Bai; Yidan Tang; Wenjing Jiang; Chengyue Yang; Jilong Hao; Xuan Li. A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V F · C res figure of merit. Japanese Journal of Applied Physics. 2024-02-05. https://doi.org/10.35848/1347-4065/ad1d19